jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 1 / 3 - http://www.jjwdz.com jmc 2 5 0 - 16 /18/20 description : 1 ) chip : double mesa scrs of reverse blocking high - voltage 2) chip area: 2 1 .4 mm 21 .4 mm (central gate thyristor) 3) technology : mesa glass passivation technology , multilayer metallization t echnology and non - void welding by vac uum welding technology typical application: reactive power compensation , solid state relay , power module, etc. absolute maximum ratings ( packaged into modules, unless otherwise specified, t c =25 ) parameter test conditions symbol value s unit operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage t j =25 v drm 1600/1800/2000 v repetitive peak reverse voltage t j =25 v rrm 1600/1800/2000 v average on - state current t c =80 i t ( av) 2 5 0 a peak on - state surge current t p= 1 0m s i tsm 56 0 0 a i 2 t value for fusing tp=10m s i 2 t 156800 a 2 s critical rate of rise of on - state current v d =2/3v drm t p= 200 s i g =0.3a t j =125 di g /dt=0.3a/ s di/dt 150 a/ s electrical characteristics ( packag ed into modules, unless otherwise specified, t c =25 ) parameter test conditions symbol value s unit peak on - state voltage i t = 7 8 0 a tp=380 s v tm 1.8 v r epetitive peak off - state current v d =v d rm t c =25 t c =1 25 i d rm1 i d rm2 100 3 5 a m a r epetitive peak re verse current v r =v r rm t c =25 t c =1 25 i rrm1 i rrm2 100 3 5 a m a triggering gate current v d =12v r l = 30 i gt 20 - 1 5 0 m a l atching current i g = 1.2 i g t i l 3 5 0 ma holding current i t = 1a i h 250 ma triggering gate voltage v d =12v r l = 30 v gt 2 v
jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 2 / 3 - http://www.jjwdz.com non triggerin g gate voltage v d =v drm t j =1 25 v gd 0. 25 v critical rate of rise of voltage v d =2/3v drm t j =1 25 gate ope n dv/dt 1000 v/ s m echanical c haracteristi c s module size 23 mm 23 mm module thickness 1.6 mm w elding area of cathode electrode 19.6 mm 19.6 mm w elding a rea of control electrode 1.5mm symbol working conditions 1) no severe mechanical shock as impact and drop off i n the process of transportation, storage and working of product. 2) storage conditions temperature: 5~40 relative humidity: 45% storage time: 3 days for the open package ; 3 months for the closed package 3) w elding conditions recommended solder component: sn63sb37 ( or lead - free solder of liquid quadrant less than 240 ) recommended soldering condition s: shown in table 1 4) welding in the gate spot is recommended to be completed one - time by using fixture . if it is necessary to use a soldering iron , the temperature of soldering iron is controlled within 280 and time is controlled within 20s. k g a
jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 3 / 3 - http://www.jjwdz.com table 1 s n63sb37 soldering conditions average heating rate 3 / s (max) preheating activation low limit of temperature t s ( min ) 100 upper limit of temperature t s (max) 150 t ime ( min ~ max ) t s 60 ~ 90 s reflow zone m elting point temperature t l 18 3 (sn63sb37) peak temperature t p 240 ( +0/ - 5 ) reflow time t p (peak temperature 5 ) 10 30 s m elting time t l 40 60 s maximum cooling rate 3.5 / s recommended process time 300 ~ 360 s ordering information 100 200 150 250 sn63pb37 t p t l ts(max) ts(min) t s t l 6 0-90s (40 -60s) t p (10 -30s) j m c 2 5 0 - 1 6 j i e j i e m i c r o e l e c t r o n i c s c o . , l t d m o d u l e o f s e r i e s i t ( a v ) = 2 5 0 a 1 6 : v d r m / v r r m 1 6 0 0 v 1 8 : v d r m / v r r m 1 8 0 0 v 2 0 : v d r m / v r r m 2 0 0 0 v c : c e n t r a l g a t e
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